Vishay General Semiconductor SI7456DDP-T1-GE3 MOSFETs 100V Vds 20V Vgs PowerPAK SO-8

Fall Time: 9 ns

Rise Time: 13 ns

Technology: Si

Unit Weight: 506.600 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 19.5 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 35.7 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 10 ns

Typical Turn-Off Delay Time: 16 ns

Id - Continuous Drain Current: 27.8 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 19 S

Rds On - Drain-Source Resistance: 27 mOhms

Vds - Drain-Source Breakdown Voltage: 100 V

Vgs th - Gate-Source Threshold Voltage: 2.8 V