Vishay General Semiconductor SISH116DN-T1-GE3 MOSFETs 40V Vds 20V Vgs PowerPAK 1212-8

Fall Time: 10 ns

Rise Time: 10 ns

Technology: Si

Unit Weight: 488.500 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel TrenchFET Power MOSFET

Qg - Gate Charge: 23 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 3.8 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 10 ns

Typical Turn-Off Delay Time: 36 ns

Id - Continuous Drain Current: 16.4 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 68 S

Rds On - Drain-Source Resistance: 7.8 mOhms

Vds - Drain-Source Breakdown Voltage: 40 V

Vgs th - Gate-Source Threshold Voltage: 1.5 V