Infineon FF225R12ME4PBPSA1 IGBT Silicon Modules 1200 V, 225 A dual IGBT module
Manufacturer: Infineon Model: FF225R12ME4PBPSA1 - Contact
Technology: Si
Configuration: Dual
Mounting Style: Screw Mount
Gate-Emitter Leakage Current: 400 nA
Maximum Gate Emitter Voltage: 20 V
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 40 C
Collector- Emitter Voltage VCEO Max: 1.2 kV
Collector-Emitter Saturation Voltage: 1.85 V
Continuous Collector Current at 25 C: 225 A
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- Easy change and return
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