Infineon IFF450B12ME4S8PB11BPSA1 IGBT Silicon Modules 1200 V, 450 A dual IGBT module
Manufacturer: Infineon Model: IFF450B12ME4S8PB11BPSA1 - Contact
Technology: Si
Mounting Style: Screw Mount
Gate-Emitter Leakage Current: 400 nA
Maximum Gate Emitter Voltage: 20 V
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 40 C
Collector- Emitter Voltage VCEO Max: 1.2 kV
Collector-Emitter Saturation Voltage: 1.75 V
Continuous Collector Current at 25 C: 450 A
- Quality Engagement
- Easy change and return
- Delivery Avaliable
- Favorable payment