NXP AFT05MS006NT1 RF Power MOSFET 136-941 MHz 6 W 7.5V

Gain: 18.3 dB

Technology: Si

Unit Weight: 280 mg

Output Power: 6 W

REACH - SVHC: Details

Mounting Style: SMD/SMT

Transistor Type: LDMOS FET

Moisture Sensitive: Yes

Number of Channels: 1 Channel

Operating Frequency: 136 MHz to 941 MHz

Transistor Polarity: N-Channel

Pd - Power Dissipation: 125 W

Vgs - Gate-Source Voltage: + 12 V

Id - Continuous Drain Current: 4.7 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Forward Transconductance - Min: 4.4 S

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 2.2 V