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Technology: Si
Unit Weight: 3 g
Mounting Style: Through Hole
Transistor Type: Bipolar Power
Operating Frequency: 175 MHz
Transistor Polarity: NPN
Pd - Power Dissipation: 60 W
Gain Bandwidth Product fT: 200 MHz
Emitter- Base Voltage VEBO: 4 V
Continuous Collector Current: 5 A
Maximum Operating Temperature: + 200 C
Minimum Operating Temperature: - 65 C
DC Collector/Base Gain hfe Min: 5
Collector- Emitter Voltage VCEO Max: 35 V
