Advanced Semiconductor, Inc. BLV31 RF Bipolar Power RF Transistor
Manufacturer: Advanced Semiconductor, Inc. Model: BLV31 - Contact
Technology: Si
Mounting Style: Through Hole
Transistor Type: Bipolar Power
Operating Frequency: 224 MHz
Transistor Polarity: NPN
Pd - Power Dissipation: 7 W
Emitter- Base Voltage VEBO: 4 V
Continuous Collector Current: 3 A
Maximum DC Collector Current: 6 A
Maximum Operating Temperature: + 200 C
Minimum Operating Temperature: - 65 C
DC Collector/Base Gain hfe Min: 15
Collector- Emitter Voltage VCEO Max: 30 V
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