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Advanced Semiconductor, Inc. MRF581 RF Bipolar Transistors NPN SILICON RF TRANSISTOR | EMIN.COM.MM

RF Transistors
Advanced Semiconductor, Inc. MRF581 RF Bipolar Transistors NPN SILICON RF TRANSISTOR

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Advanced Semiconductor, Inc. MRF581 RF Bipolar Transistors NPN SILICON RF TRANSISTOR

ManufacturerAdvanced Semiconductor, Inc.(View more products from this manufacturer)

ModelMRF581

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Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Type: Bipolar

Operating Frequency: 1 GHz

Transistor Polarity: NPN

Pd - Power Dissipation: 2.5 W

Emitter- Base Voltage VEBO: 2.5 V

Continuous Collector Current: 200 mA

Maximum DC Collector Current: 200 mA

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 50

Collector- Emitter Voltage VCEO Max: 18 V

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