Central Semiconductor 2N5232A TRF TIN/LEAD BJTs - Bipolar Transistors NPN 70Vcbo 50Vceo 5.0Vebo 100mA 625mW
Manufacturer: Central Semiconductor Model: 2N5232A TRF TIN/LEAD - Contact
Technology: Si
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: NPN
Pd - Power Dissipation: 625 mW
DC Current Gain hFE Max: 500 at 5 V, 2 mA
Emitter- Base Voltage VEBO: 5 V
Collector- Base Voltage VCBO: 70 V
Continuous Collector Current: 100 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 65 C
DC Collector/Base Gain hfe Min: 250 at 5 V, 2 mA
Collector- Emitter Voltage VCEO Max: 50 V
Collector-Emitter Saturation Voltage: 125 mV
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