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Central Semiconductor 2N5427 TIN/LEAD BJTs - Bipolar Transistors NPN 80Vcbo 80Vceo 7.0A 40W 0.7Vce

Name: Central Semiconductor 2N5427 TIN/LEAD BJTs - Bipolar Transistors NPN 80Vcbo 80Vceo 7.0A 40W 0.7Vce
Brand: Central Semiconductor

Model2N5427 TIN/LEAD

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Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 40 W

DC Current Gain hFE Max: 120

Gain Bandwidth Product fT: 30 MHz

Collector- Base Voltage VCBO: 80 V

Continuous Collector Current: 7 A

DC Collector/Base Gain hfe Min: 30

Collector- Emitter Voltage VCEO Max: 80 V

Collector-Emitter Saturation Voltage: 700 mV