Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Direct access to our certified experts
Technology: Si
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: NPN
Pd - Power Dissipation: 340 mW
DC Current Gain hFE Max: 630 at 2 mA, 5 V
Gain Bandwidth Product fT: 150 MHz
Emitter- Base Voltage VEBO: 7 V
Collector- Base Voltage VCBO: 32 V
Continuous Collector Current: 100 mA
Maximum DC Collector Current: 200 mA
Maximum Operating Temperature: + 200 C
Minimum Operating Temperature: - 65 C
DC Collector/Base Gain hfe Min: 100 at 10 uA, 5 V
Collector- Emitter Voltage VCEO Max: 32 V
Collector-Emitter Saturation Voltage: 350 mV
