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Technology: Si
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Polarity: NPN, PNP
Pd - Power Dissipation: 350 mW
DC Current Gain hFE Max: 300
Gain Bandwidth Product fT: 250 MHz, 300 MHz
Emitter- Base Voltage VEBO: 5 V, 6 V
Collector- Base Voltage VCBO: 60 V, 40 V
Continuous Collector Current: 200 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 65 C
DC Collector/Base Gain hfe Min: 100
Collector- Emitter Voltage VCEO Max: 40 V
Collector-Emitter Saturation Voltage: 200 mV, 250 mV
