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Technology: Si
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: NPN
Pd - Power Dissipation: 350 mW
DC Current Gain hFE Max: 200
Gain Bandwidth Product fT: 600 MHz
Emitter- Base Voltage VEBO: 2 V
Collector- Base Voltage VCBO: 30 V
Continuous Collector Current: 50 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
DC Collector/Base Gain hfe Min: 20
Collector- Emitter Voltage VCEO Max: 12 V
