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Technology: Si
Configuration: Single
Mounting Style: SMD/SMT
Transistor Polarity: NPN
Pd - Power Dissipation: 1.15 W
Gain Bandwidth Product fT: 100 MHz
Emitter- Base Voltage VEBO: 5 V
Collector- Base Voltage VCBO: 50 V
Continuous Collector Current: 3 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
DC Collector/Base Gain hfe Min: 100 at 3 A, 2 V
Collector- Emitter Voltage VCEO Max: 50 V
Collector-Emitter Saturation Voltage: 370 mV
