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Comchip Technology BC856A-HF BJTs - Bipolar Transistors TRANSISTOR -80V -1A

Technology: Si

Unit Weight: 112 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 250 mW

DC Current Gain hFE Max: 250

Gain Bandwidth Product fT: 100 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 80 V

Continuous Collector Current: - 100 mA

Maximum DC Collector Current: 100 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 125

Collector- Emitter Voltage VCEO Max: 65 V

Collector-Emitter Saturation Voltage: 650 mV

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