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Width: 1.3 mm
Height: 1 mm
Length: 2.15 mm
Technology: Si
Unit Weight: 5 mg
Configuration: Single
Mounting Style: SMD/SMT
Transistor Polarity: NPN
Pd - Power Dissipation: 500 mW
DC Current Gain hFE Max: 270 at 200 mA, 2 V
Gain Bandwidth Product fT: 260 MHz
Emitter- Base Voltage VEBO: 6 V
Collector- Base Voltage VCBO: 15 V
Maximum DC Collector Current: 3 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
DC Collector/Base Gain hfe Min: 270 at 200 mA, 2 V
Collector- Emitter Voltage VCEO Max: 12 V
Collector-Emitter Saturation Voltage: 200 mV
