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Fall Time: 3.7 ns, 14.6 ns
Rise Time: 2.3 ns, 3.3 ns
Technology: Si
Unit Weight: 8 mg
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Qg - Gate Charge: 700 pC, 21 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel, P-Channel
Pd - Power Dissipation: 1.2 W
Vgs - Gate-Source Voltage: - 8 V, + 8 V, - 12 V, + 12 V
Typical Turn-On Delay Time: 3 ns, 3.5 ns
Typical Turn-Off Delay Time: 7.7 ns, 61.4 ns
Id - Continuous Drain Current: 400 mA, 2.6 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 4 Ohms, 300 mOhms
Vds - Drain-Source Breakdown Voltage: 25 V, 30 V
Vgs th - Gate-Source Threshold Voltage: 650 mV, 500 mV
