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Fall Time: 4 ns, 13.1 ns
Rise Time: 1 ns, 6.1 ns
Technology: Si
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel, 1 P-Channel
Qg - Gate Charge: 8.8 nC, 13.6 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel, P-Channel
Pd - Power Dissipation: 1.18 W
Vgs - Gate-Source Voltage: - 12 V, + 20 V
Typical Turn-On Delay Time: 6 ns, 4.1 ns
Typical Turn-Off Delay Time: 11 ns, 24.6 ns
Id - Continuous Drain Current: 20 A, 17 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 31 mOhms, 42 mOhms
Vds - Drain-Source Breakdown Voltage: 30 V
Vgs th - Gate-Source Threshold Voltage: 1.85 V, 2.1 V
