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Fall Time: 2.84 ns
Rise Time: 6.18 nS
Technology: Si
Unit Weight: 15 mg
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel
Qg - Gate Charge: 9.2 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 1.12 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 3.41 ns
Typical Turn-Off Delay Time: 13.92 nS
Id - Continuous Drain Current: 5.3 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 10 S
Rds On - Drain-Source Resistance: 27 mOhms
Vds - Drain-Source Breakdown Voltage: 30 V
