Diodes Incorporated DMN3012LDG-13 MOSFETs MOSFET BVDSS: 25V~30V PowerDI3333-8 T&R 3K

Fall Time: 2.3 ns, 2.9 ns

Rise Time: 2.7 ns, 3.5 ns

Technology: Si

Unit Weight: 30 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Dual

Mounting Style: SMD/SMT

Qg - Gate Charge: 6.1 nC, 12.6 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 2.2 W

Vgs - Gate-Source Voltage: - 10 V, + 10 V

Typical Turn-On Delay Time: 5.1 ns, 4.4 ns

Typical Turn-Off Delay Time: 6.4 ns, 12.4 ns

Id - Continuous Drain Current: 20 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 27 S, 46 S

Rds On - Drain-Source Resistance: 12 mOhms, 6 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 1 V, 750 mV