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Fall Time: 26.4 ns, 26.4 ns
Rise Time: 11.5 ns, 11.5 ns
Technology: Si
Unit Weight: 8 mg
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 2 P-Channel
Qg - Gate Charge: 17.9 nC
Number of Channels: 2 Channel
Transistor Polarity: P-Channel
Pd - Power Dissipation: 1.4 W
Vgs - Gate-Source Voltage: - 8 V, + 8 V
Typical Turn-On Delay Time: 5.7 ns, 5.7 ns
Typical Turn-Off Delay Time: 27.8 ns, 27.8 ns
Id - Continuous Drain Current: 3.8 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 37 mOhms, 37 mOhms
Vds - Drain-Source Breakdown Voltage: 12 V
Vgs th - Gate-Source Threshold Voltage: 1 V
