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Width: 1.6 mm
Height: 1.1 mm
Length: 3 mm
Technology: Si
Unit Weight: 15 mg
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Polarity: NPN
Pd - Power Dissipation: 600 mW
DC Current Gain hFE Max: 350 at 10 mA, 1 V
Emitter- Base Voltage VEBO: 6 V
Collector- Base Voltage VCBO: 80 V
Continuous Collector Current: 500 mA
Maximum DC Collector Current: 500 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 65 C
DC Collector/Base Gain hfe Min: 120
Collector- Emitter Voltage VCEO Max: 80 V
Collector-Emitter Saturation Voltage: 300 mV
