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Technology: Si
Unit Weight: 10 mg
Configuration: Single
Mounting Style: SMD/SMT
Transistor Polarity: NPN
Pd - Power Dissipation: 690 mW
DC Current Gain hFE Max: 350 at 500 mA, 2 V
Gain Bandwidth Product fT: 150 MHz
Emitter- Base Voltage VEBO: 6 V
Collector- Base Voltage VCBO: 100 V
Continuous Collector Current: 4 A
Maximum DC Collector Current: 6 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
DC Collector/Base Gain hfe Min: 180 at 500 mA, 2 V
Collector- Emitter Voltage VCEO Max: 100 V
Collector-Emitter Saturation Voltage: 190 mV
