Diodes Incorporated FMMT717TA BJTs - Bipolar Transistors PNP SuperSOT

Width: 1.3 mm

Height: 1 mm

Length: 2.9 mm

Technology: Si

Unit Weight: 8 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 625 mW

DC Current Gain hFE Max: 300 at 10 mA, 2 V

Gain Bandwidth Product fT: 110 MHz

Emitter- Base Voltage VEBO: 7 V

Collector- Base Voltage VCBO: 12 V

Continuous Collector Current: - 2.5 A

Maximum DC Collector Current: 2.5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 300 at 10 mA, 2 V, 300 at 100 mA, 2 V, 180 at 2.5 A, 2 V, 60 at 8 A, 2 V, 45 at 10 A, 2 V

Collector- Emitter Voltage VCEO Max: 12 V

Collector-Emitter Saturation Voltage: 180 mV