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Width: 2.41 mm
Height: 4.01 mm
Length: 4.77 mm
Technology: Si
Unit Weight: 453.600 mg
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: NPN
Pd - Power Dissipation: 680 mW
DC Current Gain hFE Max: 25 at 10 mA, 10 V
Gain Bandwidth Product fT: 40 MHz
Emitter- Base Voltage VEBO: 6 V
Collector- Base Voltage VCBO: 260 V
Continuous Collector Current: 500 mA
Maximum DC Collector Current: 500 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
DC Collector/Base Gain hfe Min: 25 at 10 mA, 10 V
Collector- Emitter Voltage VCEO Max: 100 V
Collector-Emitter Saturation Voltage: 500 mV
