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Width: 2.41 mm
Height: 4.01 mm
Length: 4.77 mm
Technology: Si
Unit Weight: 453.600 mg
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: PNP
Pd - Power Dissipation: 1.2 W
DC Current Gain hFE Max: 100 at 10 mA, 1 V
Gain Bandwidth Product fT: 125 MHz
Emitter- Base Voltage VEBO: 6 V
Collector- Base Voltage VCBO: 140 V
Continuous Collector Current: - 3.5 A
Maximum DC Collector Current: 3.5 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Collector- Emitter Voltage VCEO Max: 100 V
