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Fall Time: 6 ns
Rise Time: 5 ns
Technology: Si
Unit Weight: 433 mg
Channel Mode: Enhancement
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: Power MOSFET
Qg - Gate Charge: 17.5 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 40 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 17 ns
Typical Turn-Off Delay Time: 25 ns
Id - Continuous Drain Current: 30 A
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 26 S
Rds On - Drain-Source Resistance: 10 mOhms
Vds - Drain-Source Breakdown Voltage: 30 V
Vgs th - Gate-Source Threshold Voltage: 1.5 V
