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Width: 4.19 mm
Height: 5.33 mm
Length: 5.2 mm
Technology: Si
Unit Weight: 55 mg
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: NPN
Pd - Power Dissipation: 1 W
DC Current Gain hFE Max: 160
Gain Bandwidth Product fT: 100 MHz
Emitter- Base Voltage VEBO: 5 V
Continuous Collector Current: 1 A
Maximum DC Collector Current: 1 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
DC Collector/Base Gain hfe Min: 40
Collector- Emitter Voltage VCEO Max: 80 V
Collector-Emitter Saturation Voltage: 500 mV
