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Width: 3.3 mm
Height: 0.8 mm
Length: 3.3 mm
Fall Time: 4.2 ns, 4.4 ns
Rise Time: 5 ns, 5.6 ns
Technology: Si
Unit Weight: 94.850 mg
Channel Mode: Enhancement
REACH - SVHC: Details
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 2 N-Channel
Qg - Gate Charge: 22 nC, 21 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 50 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 14 ns, 12.5 ns
Typical Turn-Off Delay Time: 19 ns, 18 ns
Id - Continuous Drain Current: 48 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 27 S, 26 S
Rds On - Drain-Source Resistance: 18.7 mOhms, 18.6 mOhms
Vds - Drain-Source Breakdown Voltage: 100 V
Vgs th - Gate-Source Threshold Voltage: 2 V
