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Width: 3.3 mm
Height: 0.8 mm
Length: 5 mm
Fall Time: 2.4 ns, 2.3 ns
Rise Time: 2.3 ns, 2 ns
Technology: Si
Unit Weight: 82.320 mg
Channel Mode: Enhancement
REACH - SVHC: Details
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 2 N-Channel
Qg - Gate Charge: 25 nC, 19 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 27 W, 15 W
Vgs - Gate-Source Voltage: - 12 V, + 12 V
Typical Turn-On Delay Time: 8.7 ns, 7.1 ns
Typical Turn-Off Delay Time: 25 ns, 22 ns
Id - Continuous Drain Current: 66 A, 42 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 86 S, 80 S
Rds On - Drain-Source Resistance: 4 mOhms, 5.5 mOhms
Vds - Drain-Source Breakdown Voltage: 30 V
Vgs th - Gate-Source Threshold Voltage: 2.5 V
