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Width: 4.9 mm
Height: 16.07 mm
Length: 10.36 mm
Fall Time: 17 ns
Rise Time: 15 ns
Technology: Si
Unit Weight: 2 g
Channel Mode: Enhancement
REACH - SVHC: Details
Configuration: Single
Mounting Style: Through Hole
Transistor Type: 1 N-Channel
Qg - Gate Charge: 6.2 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 27 W
Vgs - Gate-Source Voltage: - 25 V, + 25 V
Id - Continuous Drain Current: 3 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 1.9 S
Rds On - Drain-Source Resistance: 2.1 Ohms
Vds - Drain-Source Breakdown Voltage: 500 V
Vgs th - Gate-Source Threshold Voltage: 5 V
