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Width: 3.9 mm
Height: 8 mm
Length: 4.9 mm
Technology: Si
Unit Weight: 371.100 mg
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: PNP
Pd - Power Dissipation: 900 mW
DC Current Gain hFE Max: 240
Gain Bandwidth Product fT: 120 MHz
Emitter- Base Voltage VEBO: 5 V
Collector- Base Voltage VCBO: 120 V
Continuous Collector Current: - 800 mA
Maximum DC Collector Current: 800 mA
Maximum Operating Temperature: + 150 C
DC Collector/Base Gain hfe Min: 60
Collector- Emitter Voltage VCEO Max: 120 V
Collector-Emitter Saturation Voltage: 1 V
