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Fairchild KSC5502DTM BJTs - Bipolar Transistors NPN Triple Diffused Planar Silicon

Width: 6.1 mm

Height: 2.3 mm

Length: 6.6 mm

Technology: Si

Unit Weight: 260.370 mg

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 87.83 W

Gain Bandwidth Product fT: 11 MHz

Emitter- Base Voltage VEBO: 12 V

Collector- Base Voltage VCBO: 1.2 kV

Continuous Collector Current: 2 A

Maximum DC Collector Current: 2 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 14

Collector- Emitter Voltage VCEO Max: 600 V

Collector-Emitter Saturation Voltage: 400 mV

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