Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Direct access to our certified experts
Fall Time: 60 ns
Rise Time: 129 ns
Technology: SiC
Unit Weight: 6 g
Channel Mode: Enhancement
Configuration: Single
Mounting Style: Through Hole
Qg - Gate Charge: 256 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 569 W
Vgs - Gate-Source Voltage: - 5 V, + 15 V
Typical Turn-On Delay Time: 104 ns
Typical Turn-Off Delay Time: 134 ns
Id - Continuous Drain Current: 101 A
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 38.6 S
Rds On - Drain-Source Resistance: 20 mOhms
Vds - Drain-Source Breakdown Voltage: 1.7 kV
Vgs th - Gate-Source Threshold Voltage: 2.7 V
