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Infineon AIKW20N60CTXKSA1 IGBT Transistors DISCRETES

Technology: Si

Unit Weight: 6.047 g

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 166 W

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 600 V

Collector-Emitter Saturation Voltage: 1.5 V

Continuous Collector Current at 25 C: 40 A

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