Infineon BFP 520 H6327 RF Bipolar Small Signal RF BIP TRANSISTOR
Manufacturer: Infineon Model: BFP 520 H6327 - Contact
Technology: Si
Unit Weight: 7 mg
Configuration: Single
Qualification: AEC-Q100
Mounting Style: SMD/SMT
Transistor Type: Bipolar
Operating Frequency: 45 GHz
Transistor Polarity: NPN
Pd - Power Dissipation: 125 mW
Emitter- Base Voltage VEBO: 1 V
Continuous Collector Current: 50 mA
DC Collector/Base Gain hfe Min: 70
Collector- Emitter Voltage VCEO Max: 2.5 V
- Quality Engagement
- Easy change and return
- Delivery Avaliable
- Favorable payment