Infineon BFP 720 H6327 RF Silicon Germanium RF BIP TRANSISTOR
Manufacturer: Infineon Model: BFP 720 H6327 - Contact
Technology: SiGe
Configuration: Single
Qualification: AEC-Q100
Mounting Style: SMD/SMT
Transistor Type: Bipolar
Operating Frequency: 45 GHz
Transistor Polarity: NPN
Pd - Power Dissipation: 100 mW
Emitter- Base Voltage VEBO: 1.2 V
Continuous Collector Current: 25 mA
DC Collector/Base Gain hfe Min: 160
Collector- Emitter Voltage VCEO Max: 4 V
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