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Technology: Si
Unit Weight: 60 mg
Qualification: AEC-Q100
Mounting Style: SMD/SMT
Transistor Type: Bipolar Power
Operating Frequency: 1 GHz
Transistor Polarity: NPN
Pd - Power Dissipation: 280 mW
Emitter- Base Voltage VEBO: 2.5 V
Continuous Collector Current: 25 mA
Maximum DC Collector Current: 25 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 65 C
DC Collector/Base Gain hfe Min: 20
Collector- Emitter Voltage VCEO Max: 15 V
