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Technology: Si
Unit Weight: 6 mg
Qualification: AEC-Q100
Mounting Style: SMD/SMT
Transistor Type: Bipolar
Operating Frequency: 8 GHz
Transistor Polarity: NPN
Pd - Power Dissipation: 450 mW
Emitter- Base Voltage VEBO: 2 V
Continuous Collector Current: 65 mA
Maximum DC Collector Current: 65 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 65 C
DC Collector/Base Gain hfe Min: 70
Collector- Emitter Voltage VCEO Max: 12 V
