Stay Updated with Offers

Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.

By subscribing, you agree to our Terms of Service and Privacy Policy.

Quick Support

Direct access to our certified experts

Infineon IHW50N65R6XKSA1 IGBT Transistors 650 V, 50 A IGBT with monolithically integrated diode in TO-247 package

Name: Infineon IHW50N65R6XKSA1 IGBT Transistors 650 V, 50 A IGBT with monolithically integrated diode in TO-247 package
Brand: Infineon

ModelIHW50N65R6XKSA1

Contact

Quantity

Secure Checkout

Quality Engagement

Easy change and return

Delivery Available

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 251 W

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 650 V

Collector-Emitter Saturation Voltage: 1.3 V

Continuous Collector Current at 25 C: 100 A