Infineon IMZA120R014M1HXKSA1 MOSFETs CoolSiC 1200 V, 14 mohm SiC Trench MOSFET in TO247-4 package
Manufacturer: Infineon Model: IMZA120R014M1HXKSA1 - Contact
Technology: SiC
Channel Mode: Enhancement
Mounting Style: Through Hole
Qg - Gate Charge: 110 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 455 W
Vgs - Gate-Source Voltage: - 10 V, + 23 V
Id - Continuous Drain Current: 127 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 14 mOhms
Vds - Drain-Source Breakdown Voltage: 1.2 kV
Vgs th - Gate-Source Threshold Voltage: 4.2 V
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- Easy change and return
- Delivery Avaliable
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