Infineon IPP200N25N3GXKSA1 MOSFETs N-Ch 250V 64A TO220-3 OptiMOS 3

Width: 4.4 mm

Height: 15.65 mm

Length: 10 mm

Fall Time: 12 ns

Rise Time: 20 ns

Technology: Si

Unit Weight: 2 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 86 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 300 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 18 ns

Typical Turn-Off Delay Time: 45 ns

Id - Continuous Drain Current: 64 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 61 S

Rds On - Drain-Source Resistance: 17.5 mOhms

Vds - Drain-Source Breakdown Voltage: 250 V

Vgs th - Gate-Source Threshold Voltage: 2 V