Infineon IRF6618TRPBF MOSFETs 30V N-CH 2.2mOhm HEXFET 43 nC
Manufacturer: Infineon Model: IRF6618TRPBF - Contact
Width: 5.05 mm
Height: 0.7 mm
Length: 6.35 mm
Technology: Si
Unit Weight: 500 mg
Channel Mode: Enhancement
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel
Qg - Gate Charge: 46 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 89 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Id - Continuous Drain Current: 170 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 40 C
Rds On - Drain-Source Resistance: 3.4 mOhms
Vds - Drain-Source Breakdown Voltage: 30 V
Vgs th - Gate-Source Threshold Voltage: 1.6 V
- Quality Engagement
- Easy change and return
- Delivery Avaliable
- Favorable payment