Infineon IRF6725MTR1PBF DirectFET Power MOSFET 30V 1 N-CH HEXFET DIRECTFET MX

Width: 5.05 mm

Height: 0.7 mm

Length: 6.35 mm

Fall Time: 13 ns

Rise Time: 22 ns

Technology: Si

Unit Weight: 500 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 36 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 100 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 16 ns

Typical Turn-Off Delay Time: 19 ns

Id - Continuous Drain Current: 170 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Forward Transconductance - Min: 150 S

Rds On - Drain-Source Resistance: 3.2 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 2.35 V