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Width: 0.8 mm
Height: 0.55 mm
Length: 1.4 mm
Technology: SiGe
Qualification: AEC-Q100
Mounting Style: SMD/SMT
Transistor Type: Bipolar
Operating Frequency: 45 GHz
Pd - Power Dissipation: 100 mW
DC Current Gain hFE Max: 400
Emitter- Base Voltage VEBO: 1.2 V
Collector- Base Voltage VCBO: 13 V
Continuous Collector Current: 25 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Collector- Emitter Voltage VCEO Max: 4 V
