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Technology: SiGe
Unit Weight: 0.500 mg
Mounting Style: SMD/SMT
Transistor Type: Bipolar
Operating Frequency: 40 GHz
Transistor Polarity: NPN
Pd - Power Dissipation: 160 mW
Emitter- Base Voltage VEBO: 1.2 V
Continuous Collector Current: 40 mA
DC Collector/Base Gain hfe Min: 160
Collector- Emitter Voltage VCEO Max: 4 V
