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Infineon BFR840L3RHESDE6327XTSA1 RF Silicon Germanium RF BIP TRANSISTORS | EMIN.COM.MM

RF Transistors
Infineon BFR840L3RHESDE6327XTSA1 RF Silicon Germanium RF BIP TRANSISTORS

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Infineon BFR840L3RHESDE6327XTSA1 RF Silicon Germanium RF BIP TRANSISTORS

ManufacturerInfineon(View more products from this manufacturer)

ModelBFR840L3RHESDE6327XTSA1

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Technology: SiGe

Unit Weight: 0.500 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: Bipolar

Operating Frequency: 75 GHz

Pd - Power Dissipation: 75 mW

Emitter- Base Voltage VEBO: 2.9 V

Continuous Collector Current: 35 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 2.25 V

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