Infineon BSC036NE7NS3GATMA1 MOSFETs N-Ch 75V 100A TDSON-8

Width: 5.15 mm

Height: 1.27 mm

Length: 5.9 mm

Fall Time: 10 ns

Rise Time: 18 ns

Technology: Si

Unit Weight: 104.400 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 63.4 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 156 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 14 ns

Typical Turn-Off Delay Time: 38 ns

Id - Continuous Drain Current: 100 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 50 S

Rds On - Drain-Source Resistance: 3.6 mOhms

Vds - Drain-Source Breakdown Voltage: 75 V

Vgs th - Gate-Source Threshold Voltage: 2.3 V