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Infineon DF16MR12W1M1HFB67BPSA1 Silicon Carbide MOSFET, Booster, Dual N Channel, 25 A, 1.2 kV, 32.3 Milliohms, Module, 17 Pins

ModelDF16MR12W1M1HFB67BPSA1
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No. of Pins: 17

Channel Type: Dual N Channel

RDS(ON) Test Voltage: 18 V

Transistor Case Style: Module

Drain Source Voltage Vds: 1.2 kV

Operating Temperature Max: 175 °C

Continuous Drain Current Id: 25 A

Mosfet Module Configuration: Booster

Drain Source On State Resistance: 32.3 mOhm

Gate Source Threshold Voltage Max: 5.15 V

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