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Infineon DF200R12W1H3B27BOMA1 IGBT Module N-CH 1200V 30A 18-pin EASY2B-2

ModelDF200R12W1H3B27BOMA1
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IGBT Technology: IGBT 3 High Sp

IGBT Termination: Press Fit

Power Dissipation: 375

IGBT Configuration: Dual, Brake-Ch

Transistor Mounting: Clamp Mount

Transistor Case Style: Module

Operating Temperature Max: 150 °C

Continuous Collector Current: 50

Collector Emitter Voltage Max: 1.2

Collector Emitter Saturation Voltage: 1.3

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